Hard Disk Drives
7 views | +0 today
Follow
Your new post is loading...
Your new post is loading...
Rescooped by Dean Jones from Amazing Science
Scoop.it!

Computer memory can be read with a flash of light 10,000 times faster at about a fifth of energy consumption

Computer memory can be read with a flash of light 10,000 times faster at about a fifth of energy consumption | Hard Disk Drives | Scoop.it

Modern computer-memory technologies come with a trade-off. There is speedy but short-term storage for on-the-fly processing — random-access memory, or RAM — and slow but enduring memory for data and programs that need to be stored long term, typically on a hard disk or flash drive.

 

In conventional computer memory, information is stored in cells that hold different amounts of electric charge, each representing a binary '1' or '0'. Bismuth ferrite, by contrast, can represent those binary digits, or bits, as one of two polarization states, and can switch between these states when a voltage is applied — a property called ferroelectricity. Ferroelectric RAM based on other materials is already on the market. It is speedy, but the technology has not found widespread use. One problem is that the electrical signal used to read out a bit erases it, so the data must be rewritten every time. This leads to reliability problems over time.

 

Ramamoorthy Ramesh, a materials scientist at the University of California, Berkeley, and Junling Wang, a specialist in oxide materials at the Nanyang Technological University in Singapore, realized that they could take advantage of another property of bismuth ferrite to read these memory arrays in a nondestructive way. In 2009, researchers at Rutgers University in Piscataway, New Jersey, demonstrated that the material has a photovoltaic response to visible light — meaning that when it is hit by light, a voltage is created. The size of the voltage depends on which polarization state the material is in, and can be read out using electrodes or transistors. Crucially, shining light on the material doesn’t change its polarization, and so does not erase the data stored in it.

 

To test whether photovoltaic ferroelectric memory really worked, Ramesh and Wang grew films of bismuth ferrite on top of a metal oxide, then etched it into four strips. On top of that they laid four metal strips at right angles to the first set. The 16 squares where the crossbars met each acted as memory cells, and the metal and metal oxide acted as electrodes. The team used the electrodes to polarize the cells, then shone light onto the whole array and found that it produced two types of voltage readings — one negative (0) and one positive (1).

 

It takes less than 10 nanoseconds to write to and read the cells, and recording the data requires about 3 volts. The leading nonvolatile RAM technology, flash, takes about 10,000 times longer to read and write, and needs 15 volts to record.

 

Victor Zhirnov, a materials specialist at the Semiconductor Research Corporation in Durham, North Carolina, says that the technology will need to be made much smaller before it is competitive. Commercial flash memory is built using equipment that can pattern features as small as 22 nanometres, whereas the strips in the photovoltaic ferroelectric memory device are a hefty 10 micrometres wide. “Smaller size results in more memory per cubic centimetre, and thus lower cost per bit,” says Zhirnov.

 

Ramesh says that there is no fundamental reason that the memory cells in his device could not be made as small as those in other memory arrays, although it will pose some practical challenges.

 

There is also the matter of designing a system to light up the cells one at a time. Illuminating the whole array all the time, as in these first experiments, is probably not practical, says Ramesh. So engineers may have to design optical parts to funnel light to each cell individually when it needs to be read.

 


Via Dr. Stefan Gruenwald
Dean Jones's insight:

This both benifits the enviroment as well as speed in your computer. With the use of the elctric charges to transfer data at a insanse speed.

more...
No comment yet.
Scooped by Dean Jones
Scoop.it!

Researchers claim 'almost instantaneous' quantum computing ...

Researchers claim 'almost instantaneous' quantum computing ... | Hard Disk Drives | Scoop.it
Silicon is great, but we're tickling the edges of its speed limit. As a result, researchers at Oregon State University have been plugging away at a.
Dean Jones's insight:

I hope i can get this. With the new technology out these days there is no excuse to have a computer as fast as this

more...
No comment yet.
Rescooped by Dean Jones from Amazing Science
Scoop.it!

Engineers develop new magnetoelectric computer memory

Engineers develop new magnetoelectric computer memory | Hard Disk Drives | Scoop.it

The UCLA team's improved memory, which they call MeRAM for magnetoelectric random access memory, has great potential to be used in future memory chips for almost all electronic applications, including smart-phones, tablets, computers and microprocessors, as well as for data storage, like the solid-state disks used in computers and large data centers.

MeRAM's key advantage over existing technologies is that it combines extraordinary low energy with very high density, high-speed reading and writing times, and non-volatility—the ability to retain data when no power is applied, similar to hard disk drives and flash memory sticks, but MeRAM is much faster.

 

Currently, magnetic memory is based on a technology called spin-transfer torque (STT), which uses the magnetic property of electrons—referred to as spin—in addition to their charge. STT utilizes an electric current to move electrons to write data into the memory.

 

Yet while STT is superior in many respects to competing memory technologies, its electric current–based write mechanism still requires a certain amount of power, which means that it generates heat when data is written into it. In addition, its memory capacity is limited by how close to each other bits of data can be physically placed, a process which itself is limited by the currents required to write information. The low bit capacity, in turn, translates into a relatively large cost per bit, limiting STT's range of applications.

 

With MeRAM, the UCLA team has replaced STT's electric current with voltage to write data into the memory. This eliminates the need to move large numbers of electrons through wires and instead uses voltage—the difference in electrical potential—to switch the magnetic bits and write information into the memory. This has resulted in computer memory that generates much less heat, making it 10 to 1,000 times more energy-efficient. And the memory can be more than five-times as dense, with more bits of information stored in the same physical area, which also brings down the cost per bit.


Via Dr. Stefan Gruenwald
Dean Jones's insight:

Put this with the new solid state hard drive and it wont be far off getting super computer performance.

more...
No comment yet.
Rescooped by Dean Jones from Cars | Motorcycles | Gadgets
Scoop.it!

LaCie Porsche Slim Drive ~ Grease n Gasoline

LaCie Porsche Slim Drive ~ Grease n Gasoline | Hard Disk Drives | Scoop.it

http://po.st/BnmZS4 
LaCie Porsche Slim Drive

Like our page https://www.facebook.com/hydrocarbons
Download Grease n Gasoline Android app http://www.appcatch.com/app_throttlemag-245014.html 
Read more at http://www.stumbleupon.com/stumbler/greasengasoline 
 LaCie Porsche Slim Hard Drive . The breakneck speed of this slim, solid aluminum Porsche doesn't come from a turbo V-8, its impressive 400 MB/S transfer speed comes from a combination of USB 3.0 & optional Solid State Drive.


Via Grease N Gasoline
Dean Jones's insight:

Looks good!

more...
No comment yet.