Cree, Inc. continues to extend its leadership in silicon-carbide (SiC) power-device technology with the release of the industry’s first all-SiC, 1.7-kV power module in an industry-standard 62-mm housing. Powered by Cree’s C2M™ large-area SiC chip technology, the new half-bridge module exhibits an impressive 8-mΩ on-resistance and 10-times higher switching efficiency than existing silicon (Si) module technology, capable of replacing Si IGBT modules rated at 400 A or more.
“The introduction of Cree’s all-SiC, 1700-V power module opens the door for SiC devices to become the switching device of choice for high-power motor drives,” said Devin Dilley, director of medium voltage R&D for Vacon, a global supplier in the premium AC drives market. “The application of these modules in SiC-based motor drives will enable a reduction in the size and cost of filter components by up to 40 percent while simultaneously increasing system efficiency.”
The superior switching efficiency and voltage capability of this new module enables simplified, two-level topologies that are feasible at higher frequencies, eliminating the need to invest in complex, multi-level silicon-based solutions. The high power density that can be achieved with Cree’s newest half-bridge module further simplifies the implementation of modular system designs and enables extremely low mean time to repair for high overall system availability.
The new, all-SiC, 1.7-kV, 8-mΩ half-bridge module is available as part number CAS300M17BM2 at preferred distributors, including Mouser, Digi-Key and Richardson RFPD/Arrow RF & Power. Companion gate-driver boards have been developed in cooperation with Prodrive, a Netherlands-based innovator in power-systems design and manufacturing. The boards are available through Cree sales channels or directly from ProDrive. Please visit www.cree.com/Power/Products/SiC-Power-Modules/SiC-Modules/CAS300M17BM2 for more information and access to data sheets, material content, and application notes.