Power Electronics market intelligence
2.6K views | +0 today
Follow
Power Electronics market intelligence
Your new post is loading...
Your new post is loading...
Scooped by Alexandre Avron
Scoop.it!

Cree News: Cree Introduces Industry’s First 1.7-kV, All-SiC Power Module

Cree News: Cree Introduces Industry’s First 1.7-kV, All-SiC Power Module | Power Electronics market intelligence | Scoop.it

Cree, Inc. continues to extend its leadership in silicon-carbide (SiC) power-device technology with the release of the industry’s first all-SiC, 1.7-kV power module in an industry-standard 62-mm housing. Powered by Cree’s C2M™ large-area SiC chip technology, the new half-bridge module exhibits an impressive 8-mΩ on-resistance and 10-times higher switching efficiency than existing silicon (Si) module technology, capable of replacing Si IGBT modules rated at 400 A or more. 

“The introduction of Cree’s all-SiC, 1700-V power module opens the door for SiC devices to become the switching device of choice for high-power motor drives,” said Devin Dilley, director of medium voltage R&D for Vacon, a global supplier in the premium AC drives market. “The application of these modules in SiC-based motor drives will enable a reduction in the size and cost of filter components by up to 40 percent while simultaneously increasing system efficiency.”

 

The superior switching efficiency and voltage capability of this new module enables simplified, two-level topologies that are feasible at higher frequencies, eliminating the need to invest in complex, multi-level silicon-based solutions. The high power density that can be achieved with Cree’s newest half-bridge module further simplifies the implementation of modular system designs and enables extremely low mean time to repair for high overall system availability.

 

The new, all-SiC, 1.7-kV, 8-mΩ half-bridge module is available as part number CAS300M17BM2 at preferred distributors, including Mouser, Digi-Key and Richardson RFPD/Arrow RF & Power. Companion gate-driver boards have been developed in cooperation with Prodrive, a Netherlands-based innovator in power-systems design and manufacturing. The boards are available through Cree sales channels or directly from ProDrive. Please visit www.cree.com/Power/Products/SiC-Power-Modules/SiC-Modules/CAS300M17BM2 for more information and access to data sheets, material content, and application notes.

Alexandre Avron's insight:

Slowly but surely going up in voltage: We are starting to take real advantage of SiC. We strongly believe it is going to unleash all its potential at even higher voyages. Revolutionize the mass transport, Grid T&D and industrial motors world is what we expect from SiC.

 

PV inverters use was just a real conditions validation. We start to see it with micro-inverters ganging market shares, the same micro-inverters that will use GaN devices when the 600V will be massively available.

 

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

Toray Lowers Manufacturing Costs of SiC Devices With New Material

Toray Lowers Manufacturing Costs of SiC Devices With New Material | Power Electronics market intelligence | Scoop.it

Toray Industries Inc developed a material that enables to lower the manufacturing cost of SiC-based power devices, which feature lower loss but are more expensive than Si-based power devices.

The material is a highly heat-resistant photosensitive resist that can simplify the ion implantation process in the manufacturing process of SiC power devices. By using the resist, it is possible to simplify the conventional ion implementation process for SiC power devices and reduce the time required for the process by more than 40%, the company said.

 

Toray is currently delivering samples of the resist to some of its customers. SiC power devices using the material have already been commercialized, but the company plans to start volume production of them in 2017. And it is planning to be ready for volume production of the resist in fiscal 2015.

 

Compared with the ion implantation process for Si power devices, that for SiC power devices has a larger number of processes, increasing the cost of SiC power devices. With the new resit, the ion implantation process can be as simple as that for Si power devices, Toray said.

 

According to Toray, the conventional ion implantation process for SiC power devices consists of the following processes. First, an oxide (SiO2) film is formed on a SiC wafer with CVD equipment. Then, a photosensitive resist is applied to it for exposure. It is dry-etched, and the unnecessary part of the SiO2 film is removed. Also, the remaining resist is peeled off. After that, ions are implanted, and the oxide film used as a mask is removed. This process is repeated several times.

 

On the other hand, with the new photosensitive resist, it is applied to a SiC wafer by spin coating. Next, the resist is exposed and, then, calcined. By using it as a mask, the ion implantation is performed. Finally, the mask is removed. The number of processes is almost the same as that required for Si power devices, Toray said.

 

The new resist not only simplifies the ion implantation process but also eliminates the needs for CVD and dry etching equipment, enabling to reduce equipment cost and maintenance time. The volume production models of CVD and dry etching equipment cost about ¥100 million (approx US$918,864) per unit, the company said.

 

The photosensitive resist meets the following four property requirements of the ion implantation process for SiC power devices. First, a pattern with a width smaller than 1.5μm can be formed. Second, it features ion stopping capability. Third, it has a thermal resistance of 450°C. Fourth, it can be peeled off. In regard to the thermal resistance, Toray plans to improve it to 500°C within 2014. Also, the company aims to reduce the pattern width to 1μm or smaller.

 

At TPEC, in which Toray has been participating since 2012, the company has been testing the manufacturing of power devices using the new resist in collaboration with Japan's National Institute of Advanced Industrial Science and Technology (AIST), Fuji Electric Co Ltd and Ulvac Inc. In fact, it confirmed that SiC transistors and SiC schottky-barrier diodes (SBDs) (withstand voltage: 1,200V) made with the resist have electrical properties equivalent to those made with the conventional ion implantation process.

 

Toray will announce the details of the new technology at the 10th European Conference on Silicon Carbide and Related Materials (ECSCRM 2014), an academic conference on SiC technologies, which will take place from Sept 21 to 25, 2014, in France.

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

Infineon to acquire International Rectifier for 3B$ in cash

Infineon to acquire International Rectifier for  3B$ in cash | Power Electronics market intelligence | Scoop.it

Infineon Technologies and International Rectifier Corporation today announced that they have signed a definitive agreement under which Infineon will acquire International Rectifier for US-Dollar 40 per share in an all-cash transaction valued at approximately US-Dollar 3 billion.


Infineon’s and International Rectifier’s product portfolios are highly complementary. International Rectifier’s expertise in low-power, energy-efficient IGBTs and Intelligent Power Modules, Power MOSFETs and Digital Power Management ICs will integrate well with Infineon’s offering in power devices and modules.

 

With International Rectifier, Infineon acquires an advanced manufacturer in Gallium Nitride on Silicon (GaN) based power semiconductors. This combination will accelerate and solidify Infineon’s position in GaN discretes and GaN system solutions, improving its ability to pursue this strategically important technology platform with significant future growth potential.

 

The transaction will result in a broad range of products creating a comprehensive provider in the market for silicon-, silicon-carbide- and gallium-nitride-based power devices and integrated circuits (ICs).

 

The integration of International Rectifier will generate economies of scale through optimization of the combined entity’s operating expense structure and through the acceleration of the ramp-up of Infineon’s leading 300-millimeter thin wafer manufacturing capability.

 

Infineon will also have a much broader and stronger regional scope. International Rectifier has a strong presence in the US, the important center of innovation especially in the Connected World, and will also help to improve Infineon’s position in Asia. The increase in exposure to the distribution channel will allow Infineon to meet the needs of a broader range of customers.


Alexandre Avron's insight:

That is an outstanding news and a game rules changer. The two heavy weight of power semiconductors, the ones who were not playing on the same ground (Infineon on high and med. power, International Rectifier on low power) are now joined forces. If the deal is validated, this will be a huge threat to Japanese semiconductor companies. Toshiba, Mitsubishi Electric, Rohm, Panasonic: These are the only companies that were more or less competing against Infineon and IR.

 

It is also something to consider for ST Microelectronics, which is not in a very healthy position, struggling in power and trying to keep its market shares in MEMS and ICs.

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

"SiCifying" power electronics. A new SiC start-up from Sweden

"SiCifying" power electronics. A new SiC  start-up from Sweden | Power Electronics market intelligence | Scoop.it

SiCify is a newly started up company that will initially focus on services around SiC and drivers for modules populated with SiC dies. 

During the start-up we will seek relationships with industry to see the posibility of SiC in their products and what problems they face when introducing SiC into their products. And toghter we should try to attract money for product development. 

Alexandre Avron's insight:

It’s not the first time but it’s another surprise. Bo Hamarlund, well know for it’s knowledge in the field and it’s capacity to create and motivate teams around him, stroke again. A new Silicon Carbide start-up is coming from Sweden.

 

The name of the company? SiCify. A landing page at www.sicify.com will let you know about it. The objective is to « focus on services around SiC an drivers for modules populated with SiC dies. »

 

SiCify is trying to help out in the adoption fo the technology, fulfilling one the company needs for an unknown and completely new type of semiconductor material and devices.

 

Silicon Carbide is not only about chip to chip replacement with Silicon dies. If you want to get most benefits from the compound semiconductors, you better redesign most of your converter. And then the learning curve make several players reluctant to be an early adopter. They are afraid of the try and fail cost associated, especially during these times difficult for investments.

 

Let wish success to this new start-up in « Sicifying » the power electronics market.

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

Dynex opening 8 inch IGBT wafer fab in China

Dynex opening 8 inch IGBT wafer fab in China | Power Electronics market intelligence | Scoop.it

Dynex Semiconductor today announced that its parent company, Zhuzhou CSR Times Electric Co Ltd. held a ceremony at its facility in China to mark the opening of a new $240 million IGBT production base in Zhuzhou. The new production base, the first of its kind in China, and the second worldwide, will produce high-power IGBT chips and modules using 8-inch silicon. Annual output of the first phase of this new production line is expected to reach 120,000 wafers and 1 million pieces of IGBT modules. This IGBT line is being operated by the newly formed Semiconductor Business Unit of CSR Times Electric, of which Dynex is the European subsidiary.

 

The technology being used in the new facility has been developed at Lincoln in the UK by the multinational CSR Zhuzhou R&D Center based at Dynex Semiconductor Ltd. The UK R&D centre was established in 2010 to focus on leading edge power semiconductor technology and specifically the next generation of IGBT products. CSR began construction of the new 8-inch production line in May 2012. Throughout the build, equipment installation and commissioning Dynex has played a leading role in providing technical advice, support and staff training both in Lincoln and in China.

 

The IGBT is the key component in today’s energy efficient electric energy conversion systems used in electric locomotives, metros, electric and hybrid electric vehicles, electric power grids and renewable energy plants. Using the latest silicon wafer fabrication equipment and the latest process technologies, the new line will initially produce high power modules using the latest soft punch through field stop and trench technologies.

 

 

Dr Paul Taylor, President and CEO of Dynex Commented “Since the acquisition of Dynex by CSR Times Electric in 2008 there has been a rapid development in our IGBT capability. We began with 4-inch wafers, then up graded to 6-inch at our plant in Lincoln. We then extended our technology to support the design of this new facility. It complements our base in the UK by giving us access to a world leading 8-inch IGBT wafer fabrication facility and a high volume module assembly line”

 

 

“Our rapid development does not stop there “continued Dr Taylor “the new line has been kitted out with the latest equipment, and the next phase of expansion is already being planned. This targets key markets such as electric automotive and renewable energy. So at our UK R&D Center we are already working on designing the next generation of advanced silicon and silicon carbide power devices, and are busy recruiting new staff to expand our multinational research, design and development teams to meet this exciting new challenge”

 

Source: http://www.powerpulse.net/story.php?storyID=30347

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

Efficient Power Conversion (EPC) Widens the Performance Gap with the Aging Power MOSFET with “Off-the-Shelf” High Performance Gallium Nitride Power Transistors

Efficient Power Conversion (EPC) Widens the Performance Gap with the Aging Power MOSFET with “Off-the-Shelf” High Performance Gallium Nitride Power Transistors | Power Electronics market intelligence | Scoop.it
By Renee Yawger on Tuesday, July 08, 2014Source: www.epc-co.com

eGaN® power transistors continue to raise the bar for power conversion performance. Lower on-resistance, lower capacitance, higher current, and superior thermal performance enable power converters with greater than 98% efficiency.

 

EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) announces the introduction of six new-generation power transistor products and corresponding development boards. Ranging from 30 V to 200 V, these products provide significant reduction in RDS(on) greatly increasing their output current capability in applications such as high power density DC-DC converters, Point-of-Load (POL) converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.

 

New eGaN FET Products with Supporting Development Boards:

Part NumberVoltageMax RDS(on) (mΩ)
(VGS = 5 V)Min. Peak Pulsed ID (A)
(25°C, Tpulse = 300 µs)TJ (°C)Half-Bridge Development BoardsStandardLow Duty CycleEPC2023301.3590150EPC9031EPC9018EPC2024401.5550150EPC9032EPC2020602470150EPC9033EPC2021802.5420150EPC9034EPC9019EPC20221003.2360150EPC9035EPC20192004342125

EPC9014

Lower On-resistance (RDS(on))
The new family of eGaN FETs cuts on-resistance, (RDS(on)), in half, enabling high current, high power density applications.Improved Figure of Merit (FOM)
The latest generation of eGaN FETs cuts the hard-switching FOM in half compared with the previous generation for improved switching performance in high frequency power conversion applications.Extended Voltage Range
Extending the performance benefits of GaN to 30 V enables higher power DC-DC converters, Point-of-Load (POL) converters, synchronous rectifiers for isolated power supplies, PCs, and servers.Better Thermal Performance
Increased temperature capabilities and improved die layout improve the thermal and electrical performance of the Gen 4 family of devices allowing for higher power operation under all conditions.


Demonstrated Power Conversion Efficiency Improvements

To demonstrate the improved performance of these new eGaN FETs, two buck converters were built. The EPC9018combines the 30 V EPC2023 FET as the synchronous rectifier with the 40 V EPC2015 as the control switch of a 12 V – 1.2 V DC-DC point of load (POL) converter.

The 12 V to 1.2 V, 40 A POL converter operating at switching frequency of 1 MHz achieved efficiencies above 91.5% and demonstrated the superior in-circuit performance of the latest generation of eGaN power devices compared to the state-of-the-art Si MOSFET modules.

The EPC9019, a 48 V – 12 V converter, uses the 80 V, EPC2021 as the synchronous rectifier switch with the 100 VEPC2001 as the control switch. The results of this 48 V to 12 V, 30 A non-isolated DC-DC intermediate bus converter operating at a switching frequency of 300 kHz achieved efficiencies above 98%, again significantly outperforming a comparable converter using state-of-the-art silicon power MOSFETs.

Detailed results of these in-circuit demonstrations of eGaN FETs can be seen at http://bit.ly/EPCAN017.


Development Boards

To simplify the evaluation process of the latest high performance eGaN FETs, development boards are available to support easy “in circuit” performance evaluation of each new product being introduced (reference table given above). These boards include all the critical components on a single board that can be easily connected into any existing converter.

The EPC9014 and EPC9031 through EPC9035 development boards are half-bridge configurations with onboard gate drives, featuring various eGaN power transistors. All boards are 2” x 1.5” and contain two eGaN FETs using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. Each board contains all critical components and layout for optimal switching performance.

The EPC9018 and EPC9019 development boards mentioned above are also available for easy “in circuit” performance evaluation.


Price and Availability

Products

Pricing for the EPC2019 – 24 power transistors at 1K units starts at $3.14 each and are available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en


Development Boards

Pricing for corresponding development boards start at $104.40 each and are available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en


Additional Information

Design Information and Support for eGaN FETs:

Download EPC eGaN FET datasheets at http://epc-co.com/epc/Products.aspxDownload development board Quick Start Guides: http://epc-co.com/epc/Products/DemoBoards.aspxApplication Note: Fourth Generation eGaN FETs Widen the Performance Gap with the Aging MOSFET athttp://bit.ly/EPCAN017Watch short video presentation of Fourth Generation products: http://epc-co.com/epc/DesignSupport/TrainingVideos/Generation4eGaNFETs.aspx


About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Sign-up to receive EPC updates via email: http://bit.ly/EPCupdates or text "EPC" to 22828
Follow EPC on Twitter at http://twitter.com/#!/EPC_CORP
Like EPC on Facebook at http://www.facebook.com/EPC.Corporation

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 joe.engle@epc-co.com

 
more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

The Switch to be acquired by Yaskawa Electric Corporation

The Switch to be acquired by Yaskawa Electric Corporation | Power Electronics market intelligence | Scoop.it

Yaskawa Electric Corporation (“Yaskawa”), a world leader in motion control and robotics, today announced that it has signed a definitive agreement to acquire The Switch, a supplier of megawatt-class permanent magnet generator and full-power converter packages for wind power and other renewable energy applications. This acquisition will support both companies’ strategic objectives and strengthen their international presence. The estimated schedule for closing the deal is within a few weeks.

 

The Japan-based Yaskawa System Engineering Division has been focusing on growing its market share in renewable, marine and industrial applications over the past few years. In autumn 2013, the two companies entered a strategic collaboration agreement whereby Yaskawa gained access to The Switch’s proven capability in megawatt-class power generation and The Switch was able to develop its presence in Japan.
“This acquisition is a natural next step forward from our initial strategic collaboration. Over the months, we have learned more about our strengths and now understand better how to leverage our synergies,” says Hiroyuki Ougi, Yaskawa’s Corporate Senior Vice President, General Manager, System Engineering Division. “Now we can both gain access to new global markets with our wider range of innovative products.”

The product portfolios of The Switch and Yaskawa complement each other well for applications in renewables, marine and industry. Permanent magnet (PM) machines and low-voltage converters from The Switch range from 500 kW to 8.0+ MW, whereas Yaskawa offers medium-voltage converters that extend the offering to large wind turbines and other applications. Yaskawa’s global network will be used to promote The Switch’s products in wind power, marine and industrial applications.
“From our customers’ point of view, this acquisition ensures global availability of The Switch offering. Yaskawa is an industrial company that understands our strengths and shares our strategic views. With close cooperation with Yaskawa group we can further extend our offering and can serve better our customers in a broader range of wind and marine applications as well as numerous other industrial applications,” says Jukka-Pekka Mäkinen, President and CEO of The Switch.

Yaskawa with its strong expertise in inverter technology is an ideal partner for The Switch. The Switch brand will continue as its own entity for selected markets and applications. Given the ongoing woes in the renewable energy markets, the acquisition by Yaskawa will give The Switch the firm foundation and power boost needed to enable it to continue to move forward along its fast-track path of advancing the world with electrical drive trains.

ABOUT THE SWITCH

With 7 GW of installed wind power capacity, The Switch is a leading supplier of megawatt-class permanent magnet generator and full-power converter packages that effectively capture power from highly variable new energy sources like wind. The technology ensures reliable, future-proof grid compliance and maximized energy yields. Starting operations in 2006, The Switch reported net sales of EUR 46.2 million in 2013. The Switch is headquartered in Vantaa, Finland.

ABOUT YASKAWA ELECTRIC CORPORATION

Yaskawa Electric provides core technologies focused through the fields of Motion Control, Robotics Automation, and Systems Engineering aimed at enhancing customer return. Since it was founded in 1915, Yaskawa Electric has provided the best in products and technology to the market. From motor applications, advancement of industrial automation, creation of Mechatronics, and cutting edge robotics, Yaskawa has continuously been at the forefront of each era.

Alexandre Avron's insight:

We remember that Yaskawa was already in a strategic agreement with The Switch since October 2013. This deal was predictable.

 

But we also remember that The Switch was close to be acquired by AMSC (American Superconductor) back in 2011. The deal breaker came from Sinovel stealing technology from AMSC. It created a massive downturn in the Massachussets based company's growth as the Chinese manufacturer was almost 30% of its sales.

 

Now Yaskawa is stepping into Europe and entering clearly the Wind turbine and Energy generation market by the front door.

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

Motiv PS raises 7.3M$ for electric truck powertrain

Motiv PS raises 7.3M$ for electric truck powertrain | Power Electronics market intelligence | Scoop.it

The electric truck supplier of control systems to the growing electric truck market, Motiv Power Systems, raised $7.3 million in growth capital from investors led by Colorado’s Magness Investment Group. The funding comes as the second Motiv-equipped all-electric school bus is delivered to Kings Canyon Unified School District.

 

“Motiv has cracked the code on electric trucks,” said Gary Magness, Manager of the Magness Investment Group. “We are impressed with how Motiv’s approach leverages the existing truck and bus builder ecosystem to achieve scalability. I’m pleased to be a part of this revolution in trucking that brings environmental sustainability and significant fuel savings to an industry that’s the backbone of our economy.”

 

The Motiv electric Powertrain Control System (ePCS) is unique in the industry as a single product suite that can electrify any truck or bus chassis with a variety of commercially-available battery packs and motors. The Motiv ePCS, battery packs and motor are installed to replace the engine and transmission of a new incomplete chassis such as the Ford E450 in a ship-through modification.  This process, common in the truck industry, is similar to a Compressed Natural Gas ship-through modification and means minimal changes between the fossil fuel and electric versions of the final vehicle.  Existing truck and bus builders who already use these incomplete chassis can build and sell electric versions of their existing truck and bus models.

 

“It’s an honor to have the support of an investor like Mr. Magness,” said Motiv CEO Jim Castelaz.  “Not only does he see the potential in the market we are addressing, he understands our approach and believes in our vision of breaking the complete dependence trucks and buses currently have on fossil fuel.”

 

About Motiv Power Systems

Founded in 2009 and based in Foster City, CA, Motiv Power Systems designs and builds an electric Powertrain Control System (ePCS) for commercial truck and bus builders who use it to create all-electric versions of vehicles such as box trucks, flat-/stake-bed trucks, refrigerated trucks, utility/service trucks, shuttle buses, school buses, delivery vehicles and refuse trucks.

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

Infineon: From R&D to production on 300mm power devices

Infineon Technologies AG is expanding its Austrian site in Villach. Core emphasis is the on the expansion of expertise for the manufacturing of the future as well as research and development (R&D). “Pilot Space Industry 4.0” will realize and put to the test an innovative concept for networked and knowledge-intensive production. Research on new materials and technologies will also be intensified. Infineon's expansion plans foresee investments and research costs amounting to a total of € 290 million, creating approximately 200 new jobs in the period from 2014 to 2017, primarily in R&D.

 

Peter Schiefer, President of Operations at Infineon Technologies and responsible for the worldwide production sites, explains: “The continuing development of Villach is a part of our group-wide manufacturing strategy. At the site, important developments will be advanced and production-ready innovative technologies will be transferred by Infineon to other sites. At the same time our strategy will include expansion of our volume manufacturing on 300 millimeter thin wafers in Dresden and on 200 millimeter wafers in Kulim, Malaysia.”

 

Sabine Herlitschka, CEO of Infineon Technologies Austria AG, says: “With the expansion concept Villach is reinforcing its important role as a factory of innovation and a competence center for power electronics within the corporate group. We're making an important contribution to the success of the company by coupling the innovation factory in Villach with volume production in Dresden using the example of 300 millimeter thin wafer production for power semiconductors.”

Herlitschka added that this move will also develop a unique production cluster in Austria and Germany that is prominently visible throughout Europe.

 

Industry 4.0 Pilot Space

 

Infineon will construct a leading-edge building complex for research, production and measurement technology workstations. Logistics, miscellaneous infrastructures and the plant equipment will also be expanded to meet future demand. This will let Infineon mobilize the productivity and automation called for in international competition, while at the same time increasing flexibility.

 

Infineon has been actively engaged in the Industry 4.0 initiative from the very beginning; its pilot space in Villach is another step towards realizing this vision. Industry 4.0 embodies a paradigm shift in value creation and brings enormous opportunities to European industry. The Infineon Austria project is an important contribution towards increasing European competitive strength. The pilot operation in Villach will feature production based on a cyber-physical system with highly modern production control and automation systems. Under the prerequisite of the highest possible data security and data integrity levels, the interaction of man and machine will attain a new dimension in the pilot facility. At the same time, Infineon will continue to pursue its goal of increased energy efficiency in production.

 

New Materials and Technologies

 

A wide-scale research program with innovations in materials, processes, technologies and system expertise is the second pillar of the Villach site expansion, supporting development of the next generation of energy-efficient products. Here the program focuses on the integration of innovative substrates such as gallium nitride and silicon carbide, on MEMS (Micro-Electro-Mechanical Systems) and sensor technologies as well as on the continuing development of 300 millimeter thin wafer technology.

 

Regional Expertise

 

The many years of growth at Infineon Technologies Austria AG have been supported by a tightly knit collaborative network connecting the company, the city of Villach, the Austrian province of Carinthia, the Republic of Austria and European institutions. As a result it has been possible to turn southern Austria into a high-tech region and to contribute to raising the region's profile and increasing its competitive strength in the sense of “Smart Specialization”. With the “Pilot Space Industry 4.0” project Infineon is taking the next step in development, meaning it will also collaborate even more intensively with research partners, universities, technical institutes and SMEs in the innovation system. Peter Kaiser, Governor of the Austrian province of Carinthia, comments: “Carinthia and Infineon are an excellent fit, in terms of Innovation, Investment and Internationality. This Triple-I is the spirit of Carinthia in international competition and also stands exactly for Infineon as one of the internationally successful corporate leaders of our province. Together we'll write many success stories like 'Pilot Space Industry 4.0'. Such investments are proof of confidence in reforms and continuing development plans for our attractive, future-oriented business location Austria.”

 
Alexandre Avron's insight:

Infineon is the only power device manufacturer going to 300mm for medium and high power. They have developed the thin wafer technology at Villach and now move to Dresden for production. 

It concerns super junction mosfets (CoolMOS(r)) and Lower voltage IGBTs.

It's a key asset as they will be able to reduce production costs at mid-term and increase volume production. That's their best move so far to stay ahead versus Japanese competition Mitsubishi Electric mainly.

Mitsubishi still keep advantages through the quality of their high voltage IGBTS (3.3kV and more). 

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

Toshiba halts plans to buy Alstom Grid from GE, according to Nikkei

Toshiba has stepped away from its effort to acquire Alstom's power grid business, which it had hoped to purchase from General Electric.

     The Japanese concern had quietly approached GE with a proposal to buy the operation if the U.S. company succeeded in acquiring much of Alstom. But one feature in the revised bid from the American conglomerate, seen as likely to go through, is that GE will set up a 50-50 joint venture with the French partner's grid business rather than purchasing it outright.

     In light of this development, Toshiba sees the prospect of "getting ahold of a majority interest in management having become difficult," as a top company official puts it, and so decided to scrap its acquisition plans.

     Alstom's grid business generates annual sales of around 530 billion yen ($5.14 billion). Toshiba had sought to buy it for several hundred billion yen in hopes of securing sales routes in places like Europe and Africa. This would give a more global reach to its own grid business, confined primarily to Japan.

     Alstom bought the grid business from France's Areva, emerging victorious from a 2009 bidding war in which Toshiba was also a contender.

     Going forward, the Japanese company plans to expand its overseas presence via a strategic alliance with GE related to fossil-fuel power generation.

(Nikkei)

From: http://asia.nikkei.com/Business/Deals/Toshiba-shelves-plans-to-buy-Alstom-power-grid-unit-from-GE

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

Solectria Renewables release transformer-less residential inverters

Solectria Renewables release transformer-less residential inverters | Power Electronics market intelligence | Scoop.it

Solectria Renewables, LLC, a leading U.S. PV inverter manufacturer, announced the introduction of three new transformerless residential inverters, adding 5.2kW, 6.6kW and 7.6kW inverters to the existing product line.  The complete series of transformerless residential inverters includes the PVI 3800TL (introduced in January 2014), PVI 5200TL, PVI 6600TL and PVI 7600TL. These inverters are the best residential solutions available in the inverter market today.

PVI 3800-7600TL:


The PVI 3800-7600TL feature the highest peak (98%) and CEC (97.5%) efficiencies, compared with other major inverter suppliers. Their compact, lightweight design with integrated fused combiners and DC disconnect makes for quick and easy installation.  They can withstand the harshest weather conditions with NEMA 4 enclosure ratings and passive cooling without a fan.  The PVI 5200-7600TL’s come standard with dual MPPTs.  All of the inverters in this series have options for arc fault detection and interrupt as well as web-based monitoring.

“Solectria was an early entrant into the residential market in 2005.  Since then, we expanded the line to cover 1.8-7.5kW single-phase inverters. Now, the transformerless models advance efficiency, safety features and reliability for the residential PV market,” said James Worden, CEO of Solectria Renewables. “Adding the three additional transformerless inverters to the PVI 3800TL already released is evidence of our commitment to be at the forefront of all segments of the PV inverter market.”

 

About Solectria Renewables, LLC:
Solectria Renewables, LLC is a leading U.S.-based grid-tied photovoltaic inverter manufacturer.  We offer residential, commercial and utility-scale inverters. Our versatile line of high efficiency products provide power solutions ranging from 1 kW residential systems to multi-megawatt solar farms. Solectria Renewables’ products are backed by more than 25 years of experience in the power electronic and inverter industries and are supported by world class warranties. All of our three-phase central and utility-scale PV inverters are manufactured in the USA, ARRA compliant, and listed to UL 1741/IEEE 1547. To learn more about Solectria Renewables, please visit http://www.solectria.com.

 
more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

2nd Gen. SiC MOSFETs from ROHM Semiconductor available at Feature electronics

Future Electronics, a global leading distributor of electronic components, features the 2nd generation high voltage SiC MOSFETs from ROHM Semiconductor.

ROHM offers an expanded lineup of high voltage SiC MOSFETs designed to deliver cost effective, breakthrough performance in inverters and converters in power conditioners and other devices through high voltage resistance, low ON resistance, high speed switching, and fast recovery characteristics.

ROHM's latest SiC MOSFETs series features dramatically lower switching loss - as much as 90% compared with silicon IGBTs - due to the absence of tail current and fast recovery characteristics of the body diode. The resulting 70-90ns turn ON/OFF times allow for switching frequencies in the hundreds of kilohertz (kHz) range, making it possible to reduce the size and weight of passives while enabling designers to achieve higher efficiency systems by implementing simpler, less expensive cooling systems, for example by using smaller, lighter passive air-cooled heat sinks instead of liquid or forced-air thermal management.

ROHM has also succeeded in overcoming problems associated with characteristics deterioration due to body diode degradation during reverse conduction (i.e. increased ON resistance, forward voltage, and resistance deterioration) and premature failure of the gate oxide film by improving processes related to crystal defects and device structure, reducing ON resistance per unit area by about 30% over conventional products.

In addition to the standard lineup, ROHM offers the popular SCH2080KE - the industry's first SiC MOSFET to co-package a discrete anti-parallel SiC Schottky barrier diode, featuring a forward voltage three times smaller than that of the body diode. This minimizes power loss (by 70% or more) while saving valuable board space, simplifying layout, and reducing BOM costs compared to equivalent discrete solutions.

The combination of excellent switching performance, low ON resistance, and high breakdown voltage make ROHM SiC MOSFETs ideal replacements for silicon power MOSFETs and IGBTs in a wide range of applications, including solar and 3-phase inverters, DC/DC converters, uninterruptible power supplies (UPS), and motor drives.

Applications include DC/DC converters, solar power inverters, 3-phase inverters, power conditioners, uninterruptible power supplies (UPS), inverters for EVs and HEVs, AC inverters, and industrial equipment.

For more information about Rohm Semiconductor, DC/DC Converters, SCT2280KE, SCT2080KE, SiC Mosfets, or SiC SBD, as well as access to the world's largest available-to-sell inventory, visit www.FutureElectronics.com.

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

GaN Systems: GaNPX packaging process flow - YouTube

GaNPX packaging for extreme speed and current -Near chipscale embedded package -High current density & low profile -Optimal thermal performance -Extremely low inductance.

Alexandre Avron's insight:

Packaging of GaN power devices has made a long way: It's now near chip scale embedded package for GaN Systems, as in this video. There is also Wafer level packaging process flow for EPC Corp. and EZ-GaN package for Transphorm. Just as a reminder, these devices are 600-650V and up to 200A.

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

ON Semiconductor and Transphorm Partner GaN based power devices and systems

ON Semiconductor and Transphorm have announced a newly formed partnership to co-develop and co-market gallium nitride (GaN) based products and power system solutions for a variety of high voltage applications in the industrial, computing, telecom and networking sectors.

 

Transphorm is recognized as the first company to bring to market production qualified 600 volt (V) GaN on silicon transistors and has unrivalled experience working with this advanced technology. ON Semiconductor is a leading supplier of power solutions, provides significant expertise in system design, and offers an impressive portfolio that ranges from power discretes, high performance AC/DC controllers and integrated switchers to full custom ASIC power management solutions.

 

“ON Semiconductor clearly recognizes the inherent benefits that GaN technology can bring to the power electronics market and we are excited about partnering with a recognized and proven leader in this area in addition to pursuing our own GaN development work,” said Bill Hall, executive vice president and general manager of ON Semiconductor’s Standard Products Group. “This important new collaboration strategically combines our impressive power system solution capabilities with Transphorm’s GaN expertise. Together we can bolster customer confidence in this new technology and accelerate broad market adoption.”

 

“Partnering with a leading power semiconductor company like ON Semiconductor reaffirms Transphorm’s GaN leadership and will provide our customers a broader set of GaN based products and solutions,” said Fumihide Esaka, CEO of Transphorm. “This relationship is not only significant for faster penetration of GaN in the marketplace but also meaningful for the entire power conversion industry.”

 

The first co-developed solutions based on 600 V GaN transistors are expected to be available for sampling before the end of 2014. These solutions will address high power density applications in the 200 W to 1000 W power range for compact power supplies and adapters addressing the telecom and server markets. Under the terms of the partnership, the co-developed packaged transistor products will include low voltage MOSFET silicon from ON Semiconductor for the cascoded switch, and proven GaN high voltage High-Electron-Mobility Transistors (HEMT) from Transphorm. Co-packaging, assembly and test of the devices will be done at ON Semiconductor production facilities.

 
Alexandre Avron's insight:

ON semi and Transphorm are now partnering on GaN devices and systems development. This is not the first company to partner with Transphorm, and this is also a new proof that GaN is getting closer to market adoption.

The devices will be copackaged bu Transphorm and ON semi. Though, these will be Normally-off cascode devices (using ON semi's MOSFET).

We all look forward to see the first devices in 2014.

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

Danfoss and Vacon to join forces in the AC drives business

Danfoss and Vacon to join forces in the AC drives business | Power Electronics market intelligence | Scoop.it

Danfoss to acquire Vacon in the AC drives business

Danfoss announces a public tender offer for all shares of the Finnish AC drives company Vacon. Vacon shareholders are being offered a cash consideration of EUR 34 for each share in Vacon, representing an aggregate equity purchase price of approximately EUR 1038 million.

“After a careful examination of Danfoss’ offer, the Board of Directors of Vacon has unanimously decided to recommend that the shareholders accept it. Vacon is truly one of the great industrial success stories, even globally speaking. By joining forces, the two companies will create a Nordic-based global player – a new AC drives business with the clear ambition to build a leading position in the AC drives market,” says Panu Routila, Chairman of the Board at Vacon.

The background for Danfoss’ offer is the company’s strategic focus on creating profitable growth. Vacon is a good match to achieve this ambition. Today, both Danfoss Power Electronics and Vacon are significant players in the AC drives business, and together they will gain an even stronger market position.

“We have a clear strategic ambition to be one of the absolute top players in the businesses where we operate. Vacon is a very strong and innovative player and by creating this new drives business we can ensure a strong long-term growth trajectory,” says Niels B. Christiansen, CEO at Danfoss.

“I believe that customers will benefit significantly from the two companies joining forces as they will bring even more competitive, innovative, and attractive AC drives to the market. Today, Vacon is stronger than ever, and it has a great future ahead together with Danfoss,” says Vacon’s President and CEO, Vesa Laisi.

The offer is subject to e.g. approval by relevant authorities, such as competition authorities, and Danfoss gaining control of more than 90 percent of the Vacon shares.

 

Vacon in brief:

Vacon is driven by a passion to develop, manufacture and sell the best AC drives and inverters in the world - and provide customers with efficient product lifecycle services. Our AC drives offer optimum process control and energy efficiency for electric motors. Vacon inverters play a key role when energy is produced from renewable sources. Vacon has production and R&D facilities in Europe, Asia and North America, and sales offices in 30 countries. Further, Vacon has sales representatives and service partners in nearly 90 countries. In 2013, Vacon's revenues amounted to EUR 403.0 million, and the company employed globally approximately 1,600 people.

 

Danfoss in brief:

Danfoss engineers technologies that enable the world of tomorrow to do more with less. Danfoss meets the growing need for infrastructure, food supply, energy efficiency and climate-friendly solutions. The products and services offered by Danfoss are used in areas such as refrigeration, air conditioning, heating, motor control and mobile machinery. The company is also active in the field of renewable energy as well as district heating infrastructure for cities and urban communities. Danfoss’ innovative engineering dates back to 1933 and today the company is a world-leader, employing 22,500 employees and serving customers in more than 100 countries. The company is privately held by the founding family.

Alexandre Avron's insight:

Danfoss and Vacon are among the leaders in the AC drive business, but ABB is #1. They are clearly trying to build a heavy-wheight player, this to attack ABB's leader position. This is a good news for the market, again. This means that investment and R&D will be pushed forward. The AC drive business has been struggling from the economic downturn on one-side in developed countries, but there has been a lot of opportunities in developing countries. Some played well and got their growth in India, China, South-america....

 

This comes after the acquisition of The Switch (Danish generator manufacturer) by Yaskawa (a Japanese AC drive leader).

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

UPower is building nuclear 7MW batteries (not micro ones!)

UPower is building nuclear 7MW batteries (not micro ones!) | Power Electronics market intelligence | Scoop.it

UPower founder and CEO Jacob DeWitte describes the company’s first reactor design as a plug-and-play nuclear thermal battery. The idea is that customers will order a reactor that will be shipped in a container with everything needed on the reaction side and then connected to a power conversion method that makes the most sense for the particular application. Some projects might hook it up to a steam turbine, while others might use it in concert with something much closer to a jet engine.


The reactor generates 7 MW worth of heat, which comes out to about 2 MW worth of electricity once converted. That’s enough to power 2,000 homes in places like Alaska and others with lower demand for electricity. It’s also enough to power entire mining operations or military bases in places where constantly having fuel for large diesel generators shipped is too difficult or expensive.


UPower is running on an aggressive timetable for a startup whose main product splits atoms. DeWitte aims to get regulatory approval in about four years, with production and sales happening over the year following that approval.

He says the company’s biggest advantage in the process is that right now, they don’t need to actually operate their reactors to get to the next phase with regulators: Since the fission process is fairly well understood at this point, the company is simulating those parts of the reactor while testing focuses on the heat transfer process that makes the system so adaptable for different uses.


Alexandre Avron's insight:

An interesting concept and idea. Even though we want to run from nuclear power, it still has it's interest to replace local portable needs using Gasoline today.

Again, there is a need for power conversion at each-end. Multiplying the possible sources is the best option we have now for a greener future.

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

University of Tokyo Team Improves SiC Power Devices - PowerPulse.Net

University of Tokyo Team Improves SiC Power Devices - PowerPulse.Net | Power Electronics market intelligence | Scoop.it

The improvement of power device performance significantly contributes to energy saving. The operation with lower energy loss is expected especially by using silicon carbide (SiC) instead of silicon (Si) which is the common material.


The University of Tokyo team demonstrated the achievement of world’s smallest density of defects with a MOS (metal-oxide-semiconductor) test structure by employing that condition. This technique provides high quality interface of SiC without any additional processes using nitrogen-containing gas, which assures the validity of the method in the industry.


“Thermally-grown oxides on SiC have been considered to induce significant amount of interface defects and near-interface traps, which limit the electron mobility of SiC-MOSFETs. Since the carbon residues are the most possible origin of those defects, it is crucial to employ preferred oxidation conditions for the smooth CO desorption. In this study we demonstrated the formation of SiC MOS interface with reduced interface state density simply by the control of thermal oxidation conditions,” commented Associate Professor Kita.

Alexandre Avron's insight:

SiC defects is the main issue to overcome for reliability of SiC MOSFET. As MOSFET is now the main technology developed (over JFET). Defects still jeopardize systems reliability and thus slows down adoption of the technology. This paper from University of Tokyo may be a main breakthrough.

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

Applied Materials and Tokyo Electron merge to form Eteris

Applied Materials and Tokyo Electron merge to form Eteris | Power Electronics market intelligence | Scoop.it

Applied Materials, Inc. (NASDAQ: AMAT) and Tokyo Electron Limited (TSE: 8035) today unveiled the new name and logo of their combined company which will be used once the merger closes. Derived from the concept of eternal innovation for society, Eteris(TM) [pronounced: eh-TAIR-iss] embodies the spirit of what will drive the new company and speaks to what makes the combination unique.

 

"The new name for our combined company builds on the strong legacies of Applied Materials and Tokyo Electron, creating something even greater than the sum of the two," said Tetsuro Higashi, chairman, president and CEO of Tokyo Electron. "At the time we announced our plans to merge, we said this was a bold step forward for our industry. The name Eteris demonstrates our commitment to a new and exciting future for our company to create and enable technology innovations that improve the way people live."  

 

"Eteris is innovative and forward-looking and our logo symbolizes expanding future opportunities driving a new era of innovation and growth," said Gary Dickerson, president and CEO of Applied Materials. "With a new name, mission and vision, we are bringing our new company into focus so that we can move quickly, execute our combined strategy and begin to create value as soon as the merger closes."

Eteris captures the company's focus on innovations that will enable its customers and move the industry forward. Core to Eteris is the promise to leave a positive and lasting impact on the world. Paired with the name is a bold logo that celebrates Eteris' role in realizing the incredible possibility of technology. At the heart of the mark, the bright green square symbolizes the energy of the new company, the power of its technology and the foundation of innovation it provides to enable customer success. From the green foundation, bright colors and new dimensions expand, representing the many innovations Eteris will make possible every day. The logo represents expanding future opportunities that drive new innovation and growth.

 

The unveiling of the new company's name and logo are the latest milestones in the merger's progress. Last month the stockholders of Applied Materials and Tokyo Electron declared strong support for the combination. Approximately 99% of the shares voting at the Applied Materials stockholder meeting and 95% of the shares voting at the Tokyo Electron stockholder meeting voted to adopt the proposed business combination. These results underscore the value the combination brings to stockholders.  

 

The closing of the business combination remains subject to customary conditions set forth in the parties' Business Combination Agreement, including review by regulators in various countries. Applied Materials and Tokyo Electron expect the transaction to close in the second half of 2014.

 

 

 

Forward-Looking Statements
This communication contains forward-looking statements, including but not limited to those regarding the proposed business combination between Applied Materials and Tokyo Electron (the "Business Combination") and the future performance of their combined businesses. Forward-looking statements may contain words such as "expect," "believe," "may," "can," "should," "will," "forecast," "anticipate" or similar expressions, and include the assumptions that underlie such statements. These statements are subject to known and unknown risks and uncertainties that could cause actual results to differ materially from those expressed or implied by such statements, including but not limited to: the ability of the parties to consummate the Business Combination in a timely manner or at all; satisfaction of the conditions precedent to consummation of the Business Combination, including the ability to secure regulatory approvals in a timely manner or at all; Applied Materials' and Tokyo Electron's ability to successfully integrate their operations, product lines, corporate structures, transfer pricing policies, technology and employees and realize expected synergies, savings and growth; the level of demand for the combined companies' products, which is subject to many factors, including uncertain global economic and industry conditions, demand for electronic products and semiconductors, and customers' new technology and capacity requirements; Applied Materials' and Tokyo Electron's ability to (i) develop, deliver and support a broad range of products, expand their markets and develop new markets, (ii) timely align their cost structures with business conditions, and (iii) attract, motivate and retain key employees; and other risks described in  Applied Materials' filings with the Securities & Exchange Commission, Tokyo Electron's filings with the Financial Services Agency of Japan, and the registration statement on Form S-4 filed with the SEC by TEL-Applied Holdings B.V. and declared effective on May 13, 2014. All forward-looking statements are based on management's estimates, projections and assumptions as of the date hereof. Except as required under applicable law, none of Applied Materials, Tokyo Electron or TEL-Applied Holdings undertakes any obligation to update any forward-looking statements.

 

About Applied Materials

Applied Materials, Inc. (Nasdaq: AMAT) is the global leader in precision materials engineering solutions for the semiconductor, flat panel display and solar photovoltaic industries. Our technologies help make innovations like smartphones, flat screen TVs and solar panels more affordable and accessible to consumers and businesses around the world. Learn more at www.appliedmaterials.com.

 

About Tokyo Electron
Tokyo Electron Limited (TSE: 8035), established in 1963, is a global supplier of semiconductor and flat panel display production equipment, and a provider of technical support and services for semiconductor, flat panel display and photovoltaic panel production equipment worldwide. TEL has located research & development, manufacturing, sales, and service locations all over the world. http://www.tel.com

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

BASiC 3C awarded 250k$ to develop low cost 3C SiC wafers

Gov. John Hickenlooper and the Colorado Office of Economic Development and International Trade (OEDIT) announced the Advanced Industry Accelerator Grant Program grantees. 

 

BASiC 3C is developing cost effective cubic Silicon Carbide (3C-SiC) wafers produced in Colorado for power device manufacturers. While SiC is becoming the material of choice over Silicon (Si) and Gallium Nitride (GaN) for middle to high-end power device development, the traditional “4H” SiC material continues to experience issues in defects, stress, wafer diameter scaling and costs.

 

The “HFCVD” from BASiC 3C process for manufacturing 3C Silicon Carbide wafers is a breakthrough technology that enables a new generation of power devices for existing and new markets.The patented technology delivers 3C-SiC substrates which enable price/performance leading devices operating at higher voltage, higher power, faster switching speeds and elevated temperatures. It allows scalable “3C” SiC wafers (4”, 6”, 8” & 12”) with less defects, improved electron mobility that yields lower cost devices with greater performance. The result is smaller, lighter, efficient electric vehicle power trains and more efficient components in the SmartGrid.

 

BASiC 3C is backed by Innosphere Rocky mountain incubator.

Alexandre Avron's insight:

Sources:

http://www.advancecolorado.com/news/advanced-industries-accelerator-program-awards-almost-2-million-colorado-organizations

http://www.innosphere.org/page.asp?NavID=7

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

Enkris Semiconductor shows 1600V breakdown GaN HEMT on 200mm Si wafer

Enkris Semiconductor shows 1600V breakdown GaN HEMT on 200mm Si wafer | Power Electronics market intelligence | Scoop.it

Chinese semiconductor specialist Enkris Semiconductor, Inc. has successfully demonstrated the manufacture of high voltage Gallium Nitride HEMT (High Electron Mobility Transistor) structures on 200mm Silicon (GaN-on-Si) by using an AIXTRON CRIUS® II Close Coupled Showerhead® Reactor.
GaN-on-Si power devices have attracted much attention from both academics and industry recently because of their potential applications in power electronics. Due to the defective nature of heteroepitaxial GaN layers grown on silicon, GaN-on-Si power devices have suffered from high buffer leakage. Most recently, Enkris Semiconductor has produced high voltage GaN HEMT materials on 200mm silicon with excellent uniformity and low buffer leakage combined with excellent thickness uniformity of <0.5% without edge exclusion. Under special conditions the uniformity value can be improved even further.

Figure 1 Thickness mapping of 200mm GaN-on-Si wafers

“It has been well accepted that GaN on large size silicon substrates is the most cost-effective way to achieve high volume production of GaN power devices. However, a large wafer bow combined with a high buffer leakage has hindered the further development of the GaN-on-Si technology so far. Our process on 200mm silicon substrates shows that high breakdown voltage (>1600V) GaN power devices with low leakage currently can be achieved with relatively thin buffer layers of 4 µm. They simplify the growth process, minimize the wafer bow and reduce the epi-cost significantly. Based on our processes which were applied on AIXTRON’s CRIUS® system, GaN-on-Si power devices may reach even higher voltages in the near future,” comments Dr. Cheng Kai, co-founder of Enkris.



Figure 2 Leakage current of devices farbricated on 200mm GaN-on-Si wafers
Dr. Frank Wischmeyer, Vice President Power Electronics at AIXTRON, says “Enkris‘ remarkable success in achieving excellent layer quality and material properties show the capability of the Closed Coupled Showerhead® technology for high voltage GaN HEMT applications. The MOCVD technology is enabling the integration of wide band-semiconductors on large diameter silicon substrates. AIXTRON is committed to support the power electronics industry advancing toward high volume 200mm GaN-on-Si device manufacturing.”

 

About Enkris Semiconductor
Enkris Semiconductor, Inc. is located in Suzhou, Jiangsu, China. The company’s main products are GaN epi-wafers for electronics applications including both wireless communications and high voltage power switching devices.

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

TMEIC: Pioneer of Large-capacity PV Inverter

TMEIC: Pioneer of Large-capacity PV Inverter | Power Electronics market intelligence | Scoop.it
PV inverters are assembled at the rate of 400 units per month in 46B building at the Toshiba Fuchu Complex in Fuchu City, Tokyo. The building is the PV inverter production base of Toshiba Mitsubishi-Electric Industrial Systems Corp (TMEIC). TMEIC constructed the building, leasing the site from Toshiba Corp.
more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

GaN Systems is expanding: new HQ and R&D facility

GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has moved into its new headquarters and R&D facility at 1145 Innovation Drive, in the heart of Kanata’s high-tech community.

Picture: Gan Systems’ headquarters.


The firm says the move was necessitated by its expansion over the past 12 months, and it plans for continued rapid growth as GaN devices replace legacy silicon-based semiconductors in power conversion and control applications worldwide.

“These new facilities will provide the resources and capabilities we need as we move rapidly from R&D to commercialization this year,” says CEO Jim Witham. The new HQ and R&D facility is three times larger than the previous premises, with a tenfold increase in laboratory space. The labs have dedicated power and cooling. “When you produce devices that can switch 200A or more, it calls for some highly specialized facilities to fully test them,” explains co-founder & president Girvan Patterson. “The power available in this location and our custom-designed labs will enable us to fully explore higher-power applications and substantially accelerate the long-term reliability testing of our devices.”

Staffing has already increased significantly over the past six months, and GaN Systems has expanded its global team as its power conversion devices (based on its proprietary Island Technology) are commercialized.

 Source: http://www.semiconductor-today.com/news_items/2014/JUN/GANSYSTEMS_240614.shtml?utm_source=Twitter&utm_medium=Twitter&utm_campaign=Twitter
more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

Bel fuse's acquisition of Power-One power solutions thought since 2009

Bel Fuse Inc. announced today that it has closed the previously announced acquisition of the Power‑One Solutions business from ABB.  Bel acquired the Power Solutions business for approximately $117 million on a cash and debt‑free basis. The business had 2013 revenue of approximately $251 million and employs approximately 2,000 people with manufacturing facilities in Shenzhen, China and Dubnica nad Vahom, Solvakia. The acquisition is expected to be accretive to Bel’s earnings beginning in the second half of 2014.


Power Solutions is a leading provider of high‑efficiency and high‑density power conversion products for server, storage and networking equipment, industrial applications and power systems.  Power Solutions offers a premier line of standard, modified‑standard and custom designed AC/DC, DC/DC and other specific power conversion products for a variety of technologies in data centers, telecommunications and industrial applications. Power Solutions has a global sales footprint and a diverse customer base that includes some of the largest corporations and distributors in the world.


Daniel Bernstein, Bel’s President and CEO, said,  “The acquisition of Power Solutions is a major step forward in the development of Bel’s power business and the implementation of our strategy to enhance growth and profitability for our shareholders. Since 2009, we have believed that the combination of our two respective power businesses would create a dynamic enterprise capable of competing effectively on a global basis.  Bel is excited by the many growth opportunities that will be created by this transaction, and we look forward to building an industry‑leading power business with our new colleagues at Power Solutions.”

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

SiC Power MOSFETs withstand temps to 200°C

SiC Power MOSFETs withstand temps to 200°C | Power Electronics market intelligence | Scoop.it

STMicroelectronics has revealed an advanced new product family enabling power supply designers to drive up energy efficiency in applications such as solar inverters and electric vehicles, enterprise computing and industrial motor drives.

ST is among the first companies to produce this type of device, a high-voltage silicon carbide (SiC) power MOSFET, and has achieved the industry's highest temperature rating of 200°C. SiC properties help save at least 50% of the energy normally wasted passing through conventional silicon power transistors. The devices can also be physically smaller for a high breakdown voltage. This technology is seen as essential for continued improvement in system energy efficiency, miniaturization and cost.

In computer rooms and data centers, high energy costs are driving power and efficiency to the top of many IT directors' concerns. Replacing ordinary silicon switches with SiC devices, in bulk power supplies, helps increase Power Usage Effectiveness (PUE); a standard metric for determining data center energy efficiency. The Climate Savers Computing Initiative (CSCI) claims that more energy-efficient networking systems and devices can help save over $5 billion and offset 38 million tons of CO2 by 2015.

SiC MOSFETs are also used in solar inverters, as an alternative for conventional high-voltage silicon IGBTs (Insulated Gate Bipolar Transistor) to convert the DC output from the panel into high-voltage AC feeding into the mains supply with no special drive circuitry required. In addition, by operating at higher frequencies than IGBTs, SiC MOSFETs allow designers to miniaturize other components in the power supply thereby reducing cost and size as well as enhancing energy efficiency.

In electric vehicles, SiC is expected to help significantly increase the energy efficiency and reduce the size of traction systems. The US DRIVE Electrical & Electronics Technical Team, a partnership between industry and the US government's Department of Energy, is calling for energy losses to be approximately halved by 2020 while also reducing size by more than 20%. The team's roadmap specifies wide bandgap semiconductors - in other words, SiC technology - as a focus for R&D to increase power-converter efficiency and make the device tolerate higher operating temperatures more safely. The increased temperature capability of ST's SiC devices (200°C), compared to ordinary silicon and competitors' SiC MOSFETs, will help simplify vehicle cooling system design.

ST's new 1200V SiC power MOSFET, the SCT30N120, is currently sampling   and will enter volume production by September 2013. It is available in ST's proprietary HiP247 package, which has an industry-standard outline and is optimized for high thermal performance. The guide price is $35.00 in quantities of 1000 units.

more...
No comment yet.
Scooped by Alexandre Avron
Scoop.it!

Enphase Energy Launches Fourth-Generation Microinverter System in Europe

Enphase Energy Launches Fourth-Generation Microinverter System in Europe | Power Electronics market intelligence | Scoop.it

Enphase Energy, Inc. today announced its fourth-generation Enphase® System is shipping in Europe. The Enphase System now includes the M250 Microinverter, which produces 250-Watts rated AC output power. In addition, the Envoy Communications Gateway, with a Wi-Fi option, connects to the Enlighten software platform to deliver a new standard in solar system intelligence and reliability.

 

Enphase is the number one inverter used in residential solar in the Americas, according to an IHS report. The company has accelerated business momentum in its international markets as well, most notably in the UK, France and the Netherlands.

 

"We are excited to introduce the fourth-generation Enphase System to our customers across the UK and our core European markets,” says Olivier Jacques, managing director, EMEA, for Enphase Energy. "Leveraging the successful introduction of our fourth-generation System in the U.S. last year, we continue to set the bar for inverter quality, performance and reliability in EMEA.”

 

Enphase M250 Microinverter:

 Optimized for high-power solar modules, the M250 Microinverter produces 250-Watts rated AC output power and pairs with modules up to 310W. The M250 is rated at 95.7 percent EU efficiency and has been built to withstand the harshest environmental conditions. It is IP67 rated and has undergone over one million hours of testing in extreme temperature and humidity environments prior to launch. This level of quality testing and assurance is unprecedented amongst microinverters, setting a new standard for reliability in the industry. In addition, the new Enphase System continues to be supported by an industry-leading 20-year warranty.

 

The new fourth-generation Enphase M250 Microinverter is available now through authorized distribution in the UK, France, Benelux, Switzerland, Germany (<4kWp) and Italy (<3kWp). The current M215 Microinverter will remain available for European customers in addition to the introduction of the M250.

 

For more information about the fourth-generation Enphase System, visit: enphase.com/uk countries. To sign up for new training available for the M250, visit our WEBEX PAGE.

more...
No comment yet.